Analysis of transmission electron microscopy images of hydrogen platelets in proton-bombarded GaAs
- 1 February 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (3) , 704-711
- https://doi.org/10.1063/1.340060
Abstract
The technique of cross-sectional transmission electron microscopy has been applied to study the nature of the hydrogen platelets on {110} planes in proton-bombarded (5×1015 H+ cm−2 at 300 keV) and annealed (temperatures of 500 °C and above) GaAs samples. Models are presented to explain the absorption of hydrogen atoms at platelets and to calculate gas pressures in platelets. From a consideration of the radiation-induced damage and annealing processes, the absence of self-interstitial loops in these low-dose samples is explained.This publication has 28 references indexed in Scilit:
- Identification of hydrogen platelets in proton-bombarded GaAsJournal of Applied Physics, 1986
- Transmission electron microscopy of extended crystal defects in proton bombarded and annealed gaasRadiation Effects, 1983
- The nature of dislocation sources in proton bombarded GaAsRadiation Effects, 1983
- Damage distribution and measure of projected range in proton bombarded GaAsRadiation Effects, 1982
- A review of etching and defect characterisation of gallium arsenide substrate materialThin Solid Films, 1976
- The elastic constants of GaAs from 2 K to 320 KJournal of Physics C: Solid State Physics, 1973
- Calculated elastic constants for stress problems associated with semiconductor devicesJournal of Applied Physics, 1973
- Optical and electrical properties of proton-bombarded p-type GaAsJournal of Applied Physics, 1973
- Optical waveguiding in proton-implanted GaAsApplied Physics Letters, 1972
- On diffraction contrast from inclusionsPhilosophical Magazine, 1963