Ultrathin doping layers as a model for 2D systems
- 1 May 1978
- journal article
- Published by Elsevier in Surface Science
- Vol. 73, 97-105
- https://doi.org/10.1016/0039-6028(78)90475-2
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Electron-electron interaction and electronic properties of space-charge layers on semiconductor surfacesSurface Science, 1978
- Surface states in GaAs tunnel MIS structuresPhysica Status Solidi (a), 1977
- Quasi-particle properties in surface quantized states of siliconSurface Science, 1976
- Intervalley transitions in inversion layersJournal of Vacuum Science and Technology, 1976
- Density-functional calculation of sub-band structure in accumulation and inversion layersPhysical Review B, 1976
- A novel voltage tuneable infrared spectrometer-detectorIEEE Transactions on Electron Devices, 1975
- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxyJournal of Applied Physics, 1975
- Electron Exchange Energy in Si Inversion LayersPhysical Review Letters, 1973
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967