Effect of Impurity Configurations on Critical Temperature of Rectangular Ising System

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Abstract
The possibility that the transition temperature changes depending on the configurations of impurities is examined by studying the rectangular lattice with modified interaction energy at some specified places (bound defect). For several special configurations of these bond defects, the critical temperatures are calculated. These critical temperatures are shown to be the same in the linear order to the strength λ of the bond defect, but to change in the order of λ2. From the result, we can expect that the smoothing out of the transition for random system will occur in the second order of the perturbation energy or the concentration of impurities.

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