N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative

$\mathrm{N},{\mathrm{N}}^{\prime }$ -dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H) thin films have been implemented into organic thin-film field-effect transistors. Mobilities up to 0.6 cm² V⁻¹ s⁻¹ and current on/off ratios ${\text{>10}}^5$ were obtained. Linear regime mobilities were typically half of those measured in the saturation regime. X-ray studies in reflection mode suggest a spacing of ∼20 Å for thin evaporated films of PTCDI-C8H, which is consistent with the value of $\text{∼21±2\hspace{0.05em}Å}$ obtained from our simulations when an interdigitated packing structure is assumed.