Electroluminescent Properties of n-GaAs in Peroxodisulfate Solutions. Transient Behavior and Carrier Concentration Effect on Emission Spectra
- 1 November 1984
- journal article
- Published by Oxford University Press (OUP) in Bulletin of the Chemical Society of Japan
- Vol. 57 (11) , 3247-3252
- https://doi.org/10.1246/bcsj.57.3247
Abstract
No abstract availableThis publication has 31 references indexed in Scilit:
- Injection electroluminescence of n-indium phosphide in dilute nitric acidThe Journal of Physical Chemistry, 1983
- Semiconductor Electrodes: LI . Efficient Electroluminescence at Electrode in Aqueous ElectrolytesJournal of the Electrochemical Society, 1983
- Electroluminescence Transients at ZnO‐Electrodes by Hole Injection during Persulfate ReductionBerichte der Bunsengesellschaft für physikalische Chemie, 1983
- Luminescent photoelectrochemical cells. 6. Spatial aspects of the photoluminescence and electroluminescence of cadmium selenide electrodesJournal of the American Chemical Society, 1982
- Luminescent photoelectrochemical cells. 4. Electroluminescent properties of undoped and tellurium-doped cadmium sulfide electrodesThe Journal of Physical Chemistry, 1980
- Thermal Manipulation of Deactivation Processes in Luminescent Photoelectrochemical Cells Employing Tellurium‐Doped Cadmium Sulfide PhotoelectrodesJournal of the Electrochemical Society, 1980
- Semiconductor Electrodes: XIV . Electrochemistry and Electroluminescence at n‐Type in Aqueous SolutionsJournal of the Electrochemical Society, 1978
- Photoexcitation and Luminescence in Redox Processes on Gallium Phosphide ElectrodesJournal of the Electrochemical Society, 1969
- Electrochemical properties of gallium phosphide in aqueous solutionsElectrochimica Acta, 1968
- Emission of IR-radiation at germanium electrodes by electrochemical injection of minority carriersElectrochimica Acta, 1968