Low-temperature cleaning processes for Si molecular beam epitaxy

• 1 May 1993
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• Vol. 11  (3) , 1077-1082
• https://doi.org/10.1116/1.587011

Abstract

Keywords

• X RAY PHOTOELECTRON SPECTROSCOPY
• CRYSTAL GROWTH
• MOLECULAR BEAM EPITAXY
• MATERIALS SCIENCE
• TRANSMISSION ELECTRON MICROSCOPY
• QUANTUM WELL
• SECONDARY ION MASS SPECTROMETRY
• PHYSICAL PROPERTIES
• PHOTOELECTRON SPECTROSCOPY