Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes
- 1 October 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (10R)
- https://doi.org/10.1143/jjap.29.2199
Abstract
The radiation durability of a SiN X-ray mask membrane prepared by low pressure chemical vapor deposition (LPCVD) has been investigated. It is shown that the radiation durability of SiN films is marginally affected by their N/Si compositions, crystalline structures or film stress, but is drastically affected by the oxygen concentration in the film. Mask pattern displacement seems to be changed by breaking the Si–O bonds. A SiN membrane with an oxygen concentration below 1% is found to be stable under X-ray irradiation at a dosage of up to 5 kJ/cm2. Consequently, control of the oxygen concentration during the LPCVD process is vital to obtain high durability SiN X-ray masks.Keywords
This publication has 8 references indexed in Scilit:
- X-ray photoelectron spectroscopy investigation on the chemical structure of amorphous silicon nitride (a-SiNx)Journal of Vacuum Science & Technology A, 1989
- Observation of multiple silicon dangling bond configurations in silicon nitrideApplied Physics Letters, 1989
- Radiation damage in boron nitride x-ray lithography masksJournal of Vacuum Science & Technology B, 1988
- Nature of the E′ deep hole trap in metal-oxide-semiconductor oxidesApplied Physics Letters, 1987
- Composition and Structure Control by Source Gas Ratio in LPCVD SiN xJournal of the Electrochemical Society, 1983
- Silicon nitride single-layer x-ray maskJournal of Vacuum Science and Technology, 1982
- Impurities-related memory traps in silicon nitride thin filmsJournal of Vacuum Science and Technology, 1981
- Quantitative Detection of Oxygen in Silicon Nitride on SiliconJournal of the Electrochemical Society, 1976