Characteristics of two-region saturation phenomena

1 January 1969

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 16 (1) , 113-116
https://doi.org/10.1109/t-ed.1969.16572

Abstract

Diffused base bipolar transistors, especially high-voltage types, often exhibit two pronounced saturation regions. This paper elucidates the qualitative and quantitative features of this behavior which is due to conductivity modulation of the lightly doped collector region. The transport equations for ambipolar conduction in the collector region are solved with a minimum of simplifying assumptions. It is shown how this portion of the solution explains the general features of the phenomenon. A complete solution for the collectorV-Icharacteristics depends on an explicit knowledge of the recombination statistics in both the base and collector regions. A simple case is considered to demonstrate the detailed dependence of the phenomena on the physical structure. Design tradeoffs involved in the control of theV-Icharacteristics are discussed in the light of the results obtained from the analysis.

Keywords

This publication has 2 references indexed in Scilit:

The saturation characteristics of high-voltage transisitors
Proceedings of the IEEE, 1967
The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity
Proceedings of the IRE, 1956