High resolution electron energy loss spectroscopy of epitaxial films of C60 grown on GaSe
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 53 (11) , 1427-1432
- https://doi.org/10.1016/0022-3697(92)90236-7
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Epitaxial growth of single-crystalon mica by helium-atom scatteringPhysical Review B, 1991
- High-resolution electron-energy-loss spectroscopy of thin films of C_{60} on Si(100)Physical Review Letters, 1991
- Storage and Lifetime Measurements of Multiply Charged Ions Produced by Synchrotron RadiationJapanese Journal of Applied Physics, 1991
- Electronic structure of solid: Experiment and theoryPhysical Review Letters, 1991
- Total synthesis of (+)-verrucosidinJournal of the American Chemical Society, 1990
- Computation of the surface electron-energy-loss spectrum in specular geometry for an arbitrary plane-stratified mediumComputer Physics Communications, 1990
- Solid C60: a new form of carbonNature, 1990
- Characterization of insulators by high-resolution electron-energy-loss spectroscopy: Application of a surface-potential stabilization techniquePhysical Review B, 1986
- C60: BuckminsterfullereneNature, 1985
- Fast-electron spectroscopy of collective excitations in solidsProgress in Surface Science, 1972