Oxidation resistant sol-gel derived silicon oxynitride thin films
- 6 January 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (1) , 27-29
- https://doi.org/10.1063/1.96750
Abstract
Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O2 between 800 and 1000 °C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.Keywords
This publication has 4 references indexed in Scilit:
- Effect of the H2O/TEOS ratio upon the preparation and nitridation of silica sol/gel filmsJournal of Non-Crystalline Solids, 1984
- Nitridation of Silicon and Oxidized‐SiliconJournal of the Electrochemical Society, 1982
- Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS CharacteristicsJournal of the Electrochemical Society, 1982
- Thermal Nitridation of Silicon in Ammonia Gas: Composition and Oxidation Resistance of the Resulting FilmsJournal of the Electrochemical Society, 1979