Field-emission-controlled transit-time negative resistance

6 August 1970

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 6 (16) , 512-513
https://doi.org/10.1049/el:19700356

Abstract

Field emission from a Schottky contact on an n⁺–n–n⁺⁺ semiconductor is proposed for carrier injection into a space-charge region to produce a negative transit-time resistance in the microwave range. Field-emission transit-time diodes are considered to behave linearly up to amplitude saturation, to exhibit low-noise performance, and to be capable of very high frequencies (10¹⁰−10¹² Hz).

Keywords

SEMICONDUCTOR DIODES
TRANSIT TIME DEVICES

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