Many-Body Effects in the Optical Properties of Semiconductors
- 15 January 1967
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 153 (3) , 849-862
- https://doi.org/10.1103/physrev.153.849
Abstract
The high-frequency optical absorption of semiconductors of the diamond structure type has been investigated theoretically for the almost-free-electron energy-band model isotropically extended to three dimensions. Model-independent arguments show that ignoring interactions between particles so that all excitations are infinitely long-lived leads to calculated values of the absorptive part of the dielectric constant, , well below the experimental results for Ge and Si. Within our model, we have investigated self-energy and vertex corrections to due to many-body effects resulting from the Coulomb interactions between particles. Both these corrections significantly raise the theoretical value of , bringing them substantially closer to experimental ones.
Keywords
This publication has 5 references indexed in Scilit:
- Band Structure of Silicon from an Adjusted Heine-Abarenkov CalculationPhysical Review B, 1966
- Optical Properties of SemiconductorsPhysical Review B, 1963
- Wave-Number-Dependent Dielectric Function of SemiconductorsPhysical Review B, 1962
- Optical Properties of Ag and CuPhysical Review B, 1962
- On Gauge Invariance and Equivalence TheoremsProgress of Theoretical Physics, 1951