Surface recombination velocity and bulk lifetime in GaAs and InP

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Abstract
An analytical expression is derived which allows the bulk minority carrier recombination lifetime tau and the surface recombination velocity S to be extracted from a single non-contact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first-order approximation. A comparison of the computer simulation of the more complex expression and the first-order approximation reveals that the first-order expression and the first-order approximation reveals that the first-order approximation model is accurate and is equally valid for both n-type and p-type materials.