Abstract
Composition control in ion beam sputtering of thin films can be achieved by electrostatic deflection of a focused ion beam. The necessary adaptation of a multi-aperture ion source consists in using a spherically dished screen grid and an accelerator grid built up from bent deflection plates. At a total accelerating voltage of 2 kV, a focused Ar+ beam of ∠10 mA is obtained, which can be deflected up to 11° with deflection voltages not exceeding 120 V.