Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operation

1 June 1972

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 60 (6) , 726-728
https://doi.org/10.1109/PROC.1972.8734

Abstract

A method of defining the active region of stripe-geometry junction lasers by proton-bombardment-induced high-resistivity layers is described. The method yields more reproducible mode patterns and lower threshold currents than the previously used oxide insulation. The improved lasers operated continuously at heat-sink temperatures up to 110°C.

Keywords

SAMPLING METHODS
FREQUENCY
DAMPING
CONTROL SYSTEMS
LINEAR SYSTEMS
EIGENVALUES AND EIGENFUNCTIONS
IMAGE RECONSTRUCTION
HILBERT SPACE
KALMAN FILTERS
CONTINUOUS TIME SYSTEMS

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