Electric Current in a Semiconductor Space-Charge Region
- 1 October 1969
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (11) , 4612-4614
- https://doi.org/10.1063/1.1657239
Abstract
An equation for the electric current in a semiconductor space-charge region such as a p-n junction is derived. At low currents the equation has the usual form i=neμ*E−(q/e) μ*kTL∂n/∂x but the effective mobility μ* is shown to have a strong dependence on position and may be infinite or negative. This spatial dependence arises because the deviation of the average carrier energy from its equilibrium value has a first-order dependence on the current.This publication has 2 references indexed in Scilit:
- Space charge regions in semiconductorsSolid-State Electronics, 1964
- Diffusion of Hot and Cold Electrons in Semiconductor BarriersPhysical Review B, 1962