Effect of Fluorine on the Photovoltaic Properties of Amorphous Silicon Prepared by DC Glow Discharge

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Abstract
Amorphous Si–F–H films were prepared by DC glow discharge in an atmosphere of SiF4+H2. The electrical and optical properties have been described. Infrared spectra of amorphous Si–F–H have been studied for various deposition pressures. In the n-type doping characteristics, the maximum conductivity obtained is 10.0 (Ω cm)-1 with the addition of 500 vppm PH3. The Schottky barrier a · Si–F–H solar cell shows an efficiency of 3.5% under AM1, 100 mW/cm2 insolation.

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