p-Dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers
- 20 November 1993
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 21 (2-3) , 232-236
- https://doi.org/10.1016/0921-5107(93)90355-q
Abstract
No abstract availableKeywords
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