Nonlinear piezoresistance effects in silicon
- 15 February 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (4) , 1838-1847
- https://doi.org/10.1063/1.353169
Abstract
Nonlinearity of the piezoresistance effects in p‐ and n‐type silicon was measured at room temperature for three surface impurity concentrations and for three crystallographic orientations n‐type silicon was discussed with the many‐valley model.This publication has 17 references indexed in Scilit:
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