Studies of Diamond Growth Mechanisms in a Hot Filament Reactor
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The incorporation of methane into low-pressure CVD diamond thin films has been compared to that of acetylene. 13CH4 and 12C2 H2 were used as the hydrocarbon sources in a heated-filament CVD diamond growth process at a total concentration of 0.5% hydrocarbon in 99.5% hydrogen. Results indicated that methane and/or methyl radical is the dominant carbon source for diamond growth in a hot filament reactor under steady state conditions and that acetylene is rapidly hydrogenated to methane. Results also indicated that diamond surface reactions play an important role in determining the relative methane to acetylene ratios.Keywords
This publication has 8 references indexed in Scilit:
- Energetics of acetylene-addition mechanism of diamond growthThe Journal of Physical Chemistry, 1988
- Infrared detection of gaseous species during the filament-assisted growth of diamondApplied Physics Letters, 1988
- Growth mechanism of vapor-deposited diamondJournal of Materials Research, 1988
- Epitaxial growth mechanism of diamond crystal in methane-hydrogen plasmaJournal of the American Chemical Society, 1986
- Kinetics of carbon deposition on diamond powderJournal of Applied Physics, 1976
- The Synthesis of Diamond at Low PressureScientific American, 1975
- Growth of boron-doped diamond seed crystals by vapor depositionJournal of Applied Physics, 1973
- Growth of Diamond Seed Crystals by Vapor DepositionJournal of Applied Physics, 1968