Dislocations in interfaces in the h.c.p. metals—II. Mechanisms of defect mobility under stress
- 1 March 1999
- journal article
- Published by Elsevier in Acta Materialia
- Vol. 47 (5) , 1441-1453
- https://doi.org/10.1016/s1359-6454(99)00017-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Dislocations in interfaces in the h.c.p. metals—I. Defects formed by absorption of crystal dislocationsActa Materialia, 1999
- Investigation of {1012} twins in Zn using high-resolution electron microscopy: Interfacial defects and interactionsPhilosophical Magazine A, 1997
- Steps, dislocations and disconnections as interface defects relating to structure and phase transformationsActa Materialia, 1996
- High-resolution electron microscopy study of the (1012) twin and defects analysis in deformed polycrystalline alpha titaniumPhilosophical Magazine Letters, 1996
- A new model for {1012} twin growth in hcp metalsPhilosophical Magazine A, 1996
- Computer simulation of the structure and mobility of twinning disclocations in H.C.P. MetalsActa Metallurgica et Materialia, 1991
- The crystallography and atomic structure of line defects in twin boundaries in hexagonal-close-packed metalsMetallurgical Transactions A, 1991
- The crystallography and core structure of twinning dislocations in H.C.P. metalsActa Metallurgica, 1988
- Deformation by moving interfacesMetallurgical Transactions A, 1982