∼1.40 eV emission band in GaAs
- 7 January 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (1) , 3-5
- https://doi.org/10.1049/el:19820003
Abstract
Photoluminescence techniques have been used to detect and characterise the ∼ 1.40 eV emission band in an Mn-doped GaAs MBE epilayer and heated semi-insulating Cr-doped GaAs. An activation energy ∼ 110 ± 5 meV is obtained from the temperature quenching of the emission intensity, and evidence indicated that physical movement of the Mn atom is responsible for type conversion.Keywords
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