Low noise fast bipolar transistors for detector preamplifiers
- 1 February 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 36 (1) , 407-411
- https://doi.org/10.1109/23.34473
Abstract
The noise parameters of several species of microwave bipolar transistors were measured using a common base amplifier. The base spread resistance rbb of the transistors was determined from the measured noise parameters. Some species were found to have rbb of less than 30 Ω. For low-noise preamplifier applications in high-energy physics, the series noise contribution from these values of rbb is negligibly small compared with that due to the emitter resistance. Using 2SC3585 as the input transistor, an input noise voltage of 0.98 nV/√Hz and input noise current of 1.81 pA/√Hz were obtained. A simple relation between the structure of the transistors and their r bb was foundKeywords
This publication has 2 references indexed in Scilit:
- Analysis of low noise, bipolar transistor head amplifiers for high energy applications of silicon detectorsNuclear Instruments and Methods in Physics Research, 1982
- Time domain noise calculation for the common base current amplifier configurationNuclear Instruments and Methods in Physics Research, 1981