Comparison of bulk buried heterostructure and multiple quantum well laser amplifier switches

31 January 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (3) , 263-265
https://doi.org/10.1049/el:19910169

Abstract

Multiple quantum well (MQW) and bulk laser amplifier switches are directly compared by analysis of the switching speed and the wavelength dependence of contrast (extinction ratio) and noise. The MQW device is found to be three times faster, with 20dB less contrast and 12.5dB less loss at optimum wavelength. It is thus shown that MQW devices are more suitable for use as fast switches.

Keywords

SEMICONDUCTOR LASERS
WAVELENGTH DEPENDENCE
LASER AMPLIFIER SWITCHES
SWITCHING SPEED
BULK BURIED HETEROSTRUCTURE
EXTINCTION RATIO
NOISE
MQW DEVICE
MULTIPLE QUANTUM WELL
CONTRAST

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