Absorption Spectrum ofin Zircon (ZrSi)
- 10 March 1967
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 155 (2) , 262-267
- https://doi.org/10.1103/physrev.155.262
Abstract
The electronic energy levels of in ZrSi have been obtained from the absorption spectra of oriented single crystals. This host was chosen because of the relatively high () symmetry of the site occupied by the ion. Spectra were obtained at a number of temperatures between 4 and 300°K. By means of polarization selection rules, electronic energy levels were identified according to their irreducible representations; then the Slater integrals , the spin-orbit parameter , and the crystal-field parameters were determined by a least-squares fit. Because of the large crystal field, it was necessary to diagonalize all these interactions within the configuration. In all, 30 levels up to 24 000 have been fitted to an average deviation of 110 by adjusting nine parameters. The results in , are , , , , , , , , and . The first four "free-ion" parameters are in good agreement with those determined for U complexes. The ratios of the crystal-field parameters show large deviations from those calculated on a point-charge model, presumably because of the contribution of the polarization of the ligands.
Keywords
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