Modelling of Gunn-domain effects in GaAs m.e.s.f.e.t.s

1 September 1977

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 13 (18) , 537-539
https://doi.org/10.1049/el:19770387

Abstract

GaAs m.e.s.f.e.t. [S₂₂] values larger than unity have been measured from 1 to 10 GHz in the region where the I_D/V_D curves display a negative slope. An explanation of this phenomenon is proposed in terms of Gunn-domain formation. An equivalent-circuit model which includes this effect is presented and discussed.

Keywords

GAAS MESFET
1 TO 10 GHZ
GUNN DOMAIN EFFECTS
EQUIVALENT CIRCUIT MODEL

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