On the formation of solid state crystallized intrinsic polycrystalline germanium thin films
- 1 October 1997
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 12 (10) , 2548-2551
- https://doi.org/10.1557/jmr.1997.0338
Abstract
A two-step heat treatment process has been employed to crystallize low pressure deposited thin films of amorphous germanium. Large grain p-type polycrystalline germanium with a Hall effect hole mobility of greater than 300 cm2/Vs has been obtained. Films with near intrinsic conductivity, necessary for the construction of practical enhancement-mode insulated-gate thin film transistors, were obtained by introducing phosphorus as a compensating dopant. High Hall effect electron mobility of 245 cm2/Vs has been measured on the resulting n-type polycrystalline germanium thin films.Keywords
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