The effect of NO2 doping on the gas sensing properties of copper phthalocyanine thin film devices
- 1 February 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 360 (1-2) , 10-12
- https://doi.org/10.1016/s0040-6090(99)00870-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The surface reaction and diffusion of NO2 in lead phthalocyanine thin filmThin Solid Films, 1999
- A study of the response rate to nitrogen dioxide exposure in metal phthalocyanine thin film sensorsThin Solid Films, 1998
- Characteristics of the substituted metal phthalocyanine NO2 sensorSensors and Actuators B: Chemical, 1993
- Organic photoconductive materials: recent trends and developmentsChemical Reviews, 1993
- Investigations of materials and device structures for organic semiconductor solar cellsOptical Engineering, 1993
- The sensitivity to NO2 of sandwich devices based on lead phthalocyanine and copper phthalocyanineSensors and Actuators B: Chemical, 1991
- Kinetic factors in the response of organometallic semiconductor gas sensorsSensors and Actuators, 1989
- Gas-induced electrical conductivity changes in metal phthalocyaninesSensors and Actuators, 1986
- Increasing the quantum efficiency of nickel phthalocyanine films by oxygen adsorptionSurface Science, 1980
- Electron donor–acceptor interactions and surface semiconductivity in molecular crystals as a function of ambient gasJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1980