Influence of gamma irradiation on ESR active defects in SIMOX structures
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Nature of paramagnetic centers ina-Si anda-Si:HPhysical Review B, 1988
- Silicon-on-insulator material formed by oxygen implantation and high-temperature annealing: Carrier transport, oxygen activity, and interface propertiesJournal of Applied Physics, 1987
- Classification of Defects in Silicon after Their g−;ValuesPhysica Status Solidi (b), 1983