New features of real-space hot-electron transfer in the NERFET
- 31 December 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (12) , 1841-1844
- https://doi.org/10.1016/0038-1101(89)90322-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operationIEEE Electron Device Letters, 1986
- High-frequency amplification and generation in charge injection devicesApplied Physics Letters, 1986
- Charge injection transistor based on real-space hot-electron transferIEEE Transactions on Electron Devices, 1984
- A field-effect transistor with a negative differential resistanceIEEE Electron Device Letters, 1984