Electrical Contacts for n-Type Diamond

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Abstract
Electric properties at metal/n-type diamond interfaces are investigated. Homoepitaxial diamond thin films with n-type conduction are grown on {111} diamond substrates by microwave-enhanced plasma chemical vapor deposition. Gold, copper and aluminum, which have a low reactivity for diamond, are deposited on diamond films. Au and Cu contacts are found to give good n-type rectification properties with a small reverse current. However, a large reverse current is observed for Al contacts. This large reverse current may originate from the lowering of the Schottky barrier height at the Al/n-type diamond interfaces.