Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature

Abstract
We report high-temperature (240300K) operation of a tunneling quantum-dot infrared photodetector. The device displays two-color characteristics with photoresponse peaks at 6μm and 17μm . The extremely low dark current density of 1.55Acm2 at 300K for 1V bias is made possible by the tunnel filter. For the 17μm absorption, the measured peak responsivity is 0.16AW (300K) for a bias of 2V and the specific detectivity D* is 1.5×107cmHz12W (280K) for a bias of 1V . Excellent performance characteristics are also measured for the 6μm photoresponse.