Temperature-dependent structural and optical properties of SnS films
- 1 May 2007
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 101 (9) , 093522
- https://doi.org/10.1063/1.2729450
Abstract
The structural and optical properties of SnS films deposited on glass substrates have been studied at different temperatures under a vacuum of . At room temperature, the SnS films showed orthorhombic crystal structure with lattice parameters of , , and . These films also showed an optical band gap of with a high absorption coefficient, . X-ray diffraction studies at different temperatures demonstrated that the structure of the SnS films remains constant. However, the volume of the unit cell of SnS films increased with the increase of temperature. It might be due to the expansion of the lattice. The effect of temperature on the band gap of SnS films is also marginal . It indicates that the SnS films are optically stable even at very low temperatures due to its stabilized structure. Therefore, SnS films offer an opportunity to be used as alternative semiconducting materials as active layers for the fabrication of optoelectronic devices.
This publication has 42 references indexed in Scilit:
- Synthesis, characterisation and thermal decomposition of tin(IV) dithiocarbamate derivatives – single source precursors for tin sulfide powdersPolyhedron, 2004
- Photoelectrochemical characteristics of brush plated tin sulfide thin filmsSolar Energy Materials and Solar Cells, 2003
- Optimization of photoconductivity in vacuum-evaporated tin sulfide thin filmsSemiconductor Science and Technology, 1999
- Cathodic electrodeposition of SnS in the presence of EDTA in aqueous mediaSolar Energy Materials and Solar Cells, 1998
- Growth of polycrystalline SnS films by spray pyrolysisThin Solid Films, 1998
- Electrical properties of flash-evaporated tin selenide filmsThin Solid Films, 1991
- Influence of temperature and pressure on the electronic transitions in SnS and SnSe semiconductorsPhysical Review B, 1990
- Preparation and characterization of chemically deposited tin(II) sulphide thin filmsThin Solid Films, 1987
- Optical spectra and energy band structure of layer‐type AIVBVI compoundsPhysica Status Solidi (b), 1986
- Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy ConversionJournal of Applied Physics, 1956