Device characteristics of the GaN/InGaN-doped channel HFETs
- 1 November 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 22 (11) , 501-503
- https://doi.org/10.1109/55.962643
Abstract
First dc, small signal, and RF power characteristics of GaN/InGaN doped-channel heterojunction field effect transistors (HFETs) are reported. HFETs with a 1-μm gate length have demonstrated a maximum drain current of 272 mA/mm, a flat G/sub m/ around 65 mS/mm in a V/sub GS/ between -0.65 V and +2.0 V, and an on-state breakdown voltage over 50 V. Complete pinchoff was observed for a -3.5 V gate bias. Devices with a 1-μm gate length have exhibited an f T of 8 GHz and f max of 20 GHz. A saturated output power of 26 dBm was obtained at 1.9 GHz for a 1 μm×1 mm device.Keywords
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