Transient photocurrent induced in gallium nitride by two-photon absorption
- 30 September 1996
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (14) , 2095-2097
- https://doi.org/10.1063/1.116891
Abstract
We have studied the subband gap induced, transient photocurrent in an epitaxial GaN film immersed in an electrolyte solution. For photon energies near the midgap position, one‐ and two‐photon (TP) contributoins were observed in the photocurrent. The one‐photon term exhibited a sublinear intensity dependence and was attributed to carrier generation from traps in the gap. The TP current was negligible for energies below Egap/2. Above this energy, the dispersion was consistent with previous calculations of the TP absorption coefficient [β(ω)] in direct gap semiconductors. A relationship between the TP photocurrent and β(ω) determined a value for the latter of ∼1.5 cm/GW at photon energies above Egap/2.Keywords
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