Effective-mass theory for electrons in heterostructures

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Abstract
We present an effective-mass theory which can treat the potential due to the redistribution of electrons in heterostructures of III–V semiconductors, including MIS junctions and superlattices. A multiband representation deals with the interaction of the conduction and valence bands. Matching conditions for the components of the envelope function across an interface are deduced by two methods, one in terms of Kane’s k⋅p model, and the other in terms of a tight-binding model. Consequences of these matching conditions are discussed briefly.

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