VIB-4 the effect of channel length and gate oxide thickness on the performance of insulated gate transistors
- 1 November 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (11) , 2554
- https://doi.org/10.1109/T-ED.1985.22377
Abstract
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