Improved performance in tensile-strained long wavelength lasers
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A tensile-strained active region enhances TM gain, reducing radiative currents in semiconductor lasers. Auger recombination is reduced but not intervalence band absorption. Tensile InGaAs/InGaAsP approaches a Type II band line-up, increasing barrier-related losses.Keywords
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