p-Channel MODFET's using GaAlAs/GaAs two-dimensional hole gas

1 August 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 5 (8) , 333-335
https://doi.org/10.1109/EDL.1984.25935

Abstract

P-channel MODFET's were fabricated in the GaAlAs/GaAs system and the properties of the hole gas system tested to ascertain its suitability for complementary logic. The Hall mobilities on a Ga.5Al.5As/GaAs modulation-doped hole gas structure were measured to be 3650 cm2V-1s-1and 54000 cm2V-1s-1with sheet carrier concentration of 1 × 1012cm-2and 7.76 × 1011cm-2at 77 and 4.2 K, respectively. The measured transconductances of 1.5-µm gate-length MODFET's on this structure were measured to lie in the range of 28-35 mS.mm-1at 77 K. The field mobility measured on long gate-length MODFET's was approximately 3200 cm2V-1s-1at 77 K. Using test structures for measuring current voltage characteristic in the hole-gas system, low field drift mobility was measured to be 3000 cm2V-1s-1and velocities of 3 5 × 106cm.s-1were measured at electric fields of 3-4 kV.cm-1at 77 K. The Schottky barriers showed low leakage and a barrier height of 0.7 to 0.8 eV. Calculations indicate that transconductances of approximately 100 mS.mm-1should be achievable in this system for similar gate lengths.

Keywords

This publication has 0 references indexed in Scilit: