Magnetotransport properties of iron thin films

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Abstract
The magnetotransport properties of iron thin films grown by molecular‐beam epitaxy (MBE) have been investigated. The films were grown on (110) GaAs substrates and were allowed to develop a natural oxide. The iron oxide on the free surface is FeO and has an antiferromagnetic transition temperature on the order of 200 K. This antiferromagnetic oxide provides an exchange bias for the iron film at low temperatures. Although it is usual to study exchange coupling with magnetization measurements, we have used the low‐temperature magnetotransport properties of the films to study the exchange coupling and compare it to models of this phenomenon.