Monolithic integration of GaAs-(GaAl)As light modulators and distributed-Bragg-reflector lasers
- 1 March 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (5) , 314-316
- https://doi.org/10.1063/1.90033
Abstract
Integration of an intensity light modulator and a LOC‐DBR laser on a single chip has been demonstrated. The injection‐type modulator gives a variable loss (or gain) to the laser light, coupled to it via an interconnecting waveguide, and thus modulates its intensity in accordance with the injected current of the modulator. An extinction ratio of more than 10 was obtained.Keywords
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