Junction Field Effect Transistors at 4.2 K

1 July 1970

journal article
research article
Published by AIP Publishing in Review of Scientific Instruments

Vol. 41 (7) , 917-919
https://doi.org/10.1063/1.1684726

Abstract

We report the behavior of 24 different types of junction field effect transistors at 4.2 K, giving the characteristics (gain, bandwidth, and noise) of the six different types which make satisfactory amplifiers.

Keywords

BEHAVIOR
FIELD EFFECT
EFFECT TRANSISTORS
SATISFACTORY
NOISE
AMPLIFIERS
GIVING
BANDWIDTH
JUNCTION

This publication has 4 references indexed in Scilit:

MOSFET Operation at 4.2 K
Review of Scientific Instruments, 1968
Operation of a Germanium FET at Low Temperatures
Review of Scientific Instruments, 1968
Field Effect Transistors at 4.2°K
Review of Scientific Instruments, 1968
Germanium Fet--A Novel Low-Noise Active Device
IEEE Transactions on Nuclear Science, 1968