Characteristics of an all-implanted p+-n-n+solar cell
- 1 March 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (3) , 68-70
- https://doi.org/10.1109/edl.1984.25835
Abstract
This work presents the main electrooptical parameters of a p+-n-n+single-crystalline silicon solar cell, whose front p+-n junction and the backside n-n+contact were fabricated through masked ion implantation of boron (11B+) and phosphorus (31p+), respectively. The distinctive feature of the cells consists of the use of the front junction silicon dioxide mask as an AR layer in the finished devices.Keywords
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