Gigabit per second operation by monolithically integrated InGaAsP/InP LD-FET
- 19 July 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (15) , 618-619
- https://doi.org/10.1049/el:19840425
Abstract
A single-step grown 1.3 μm buried-heterostructure laser and FET are monolithically integrated on a semi-insulating InP substrate. 2 Gbit/s RZ random pulse modulation has been first achieved for monolithic light sources.Keywords
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