Phosphorous Vacancy Nearest Neighbor Hopping Induced Instabilities in InP Capacitors: II . Computer Simulation

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Abstract
Drain current drift in metal insulator semiconductor devices display distinct activation energies and pre‐exponential factors. We have given evidence that these result from two physical mechanisms: thermionic tunneling of electrons into native oxide traps and phosphorous vacancy nearest neighbor hopping (PVNNH). We here present a computer simulation of the effect of the PVNNH mechanism on flatband voltage shift vs. bias stress time measurements. The simulation is based on an analysis of the kinetics of the PVNNH defect reaction sequence in which the electron concentration in the channel is related to the applied bias by a solution of the Poisson equation. The simulation demonstrates quantitatively that the temperature dependence of the flatband shift is associated with PVNNH for temperatures above room temperature.

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