In _0.53 Ga _0.47 As p-i-n photodiodes for long-wavelength fibre-optic systems

25 October 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (22) , 713-715
https://doi.org/10.1049/el:19790507

Abstract

We describe p-i-n photodiodes fabricated from In_0.53Ga_0.47As grown lattice-matched on InP substrates. These diodes exhibit low junction capacitance (C<1 pF at 20 V reverse bias), low dark current (≈10 nA), high break-down voltage (110 V) and wide photoresponse extending beyond 1.7 μm.

Keywords

JUNCTION CAPACITANCE
INP
IN0.53GA0.47AS P-I-N PHOTODIODES
LONG WAVELENGTH FIBRE OPTIC SYSTEMS
BREAKDOWN VOLTAGE

In 0.53 Ga 0.47 As p-i-n photodiodes for long-wavelength fibre-optic systems

Abstract

Keywords

In _0.53 Ga _0.47 As p-i-n photodiodes for long-wavelength fibre-optic systems