Structural change of TiN/Ti/SiO2 multilayers by N2 annealing
- 1 May 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 320 (1) , 31-34
- https://doi.org/10.1016/s0040-6090(97)01062-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact SystemsJapanese Journal of Applied Physics, 1991
- Analytical electron microscopy of Al/TiN contacts on silicon for applications to very large scale integrated devicesJournal of Applied Physics, 1987
- Silicide and Schottky barrier formation in the Ti-Si and the Ti-SiOx -Si systemsJournal of Applied Physics, 1982