Performance limits in 1:1 UV projection lithography

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Abstract
A modified optical design of the 1:1 Perkin–Elmer printer was evaluated at 3100 Å and 4000 Å for fine-line photolithography. Special optical coatings were applied to the reflecting surfaces to optimize overall transmission at a 3100 Å exposure wavelength while allowing selection of the exposing wavelength by optical filters. A test mask was designed for this evaluation which consists of an array of meander patterns for imaging onto metallized silicon wafers which can be electrically probed for integrity after etching. The array of 300 sites contains meander patterns with widths and spaces varying from 0.5 μm in 0.25 μm steps to 2.5 μm. A plot of the electrical probe yield of the meander patterns with respect to feature dimension indicates performance of the lithography.

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