Solid Solubility and Diffusion Coefficients of Boron in Silicon
- 1 January 1969
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 116 (8) , 1142-1144
- https://doi.org/10.1149/1.2412239
Abstract
The solid solubility and diffusion coefficients of boron in silicon have been determined as a function of temperature over the range of 700°–1151°C, by anodically sectioning diffused layers. The solid solubility was found to vary from at 700°C to at 1151°C. The diffusion coefficients for impurity levels below 1018 atoms/cm3 may be represented by . The diffusion coefficients above 1018 atoms/cm3 were found to be dependent on the impurity level.Keywords
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