Invited Paper Photochemical Cleaning And Epitaxy Of Si
- 22 April 1987
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 797, 90-98
- https://doi.org/10.1117/12.941030
Abstract
Photochemical effect on silicon surface cleaning and epitaxial film growth was investigated. Under ultraviolet light irradiation, the surface native oxide on the silicon substrate was removed at 730°C. An epitaxial film with high crystal quality was grown on the silicon substrate at a temperature as low as 540°C after thermal surface cleaning at980°C. The ultraviolet light irradiation seemed to be effective for gas-phase dissociation and surface reaction. Auto-doping was suppressed by using low temperature epitaxial growth and an almost ideal step junction was fabricated. A bipolar transistor having 65 nm epitaxially grown base layer was successfully operated.Keywords
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